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NCS20082DR2G
  • image of Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps>NCS20082DR2G
  • image of Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps>NCS20082DR2G
NCS20082DR2G
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
onsemi
IC OPAMP GP 2 C
-
卷带(TR) 剪切带(CT) 定制卷带 散装
100
-
-
: 12.6
: 100

1

12.6

12.6

10

11.024

110.24

25

10.3624

259.06

100

8.4586

845.86

250

7.85752

1964.38

500

6.68262

3341.31

1

5.51925

5.51925

image of Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps>NCS20082DR2G
image of Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps>NCS20082DR2G
NCS20082DR2G
NCS20082DR2G
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
onsemi
IC OPAMP GP 2 C
-
卷带(TR) 剪切带(CT) 定制卷带 散装
100
-
TYPEDESCRIPTION
制造商onsemi
系列-
包装卷带(TR)
零件状态在售
放大器类型通用
电路数2
输出类型满摆幅
压摆率0.4V/µs
增益带宽积1.2 MHz
电流 - 输入偏置1 pA
电压 - 输入补偿500 µV
电流 - 供电48µA(x2 通道)
电流 - 输出/通道15 mA
电压 - 跨度(最小值)1.8 V
电压 - 跨度(最大值)5.5 V
工作温度-40°C ~ 125°C(TA)
安装类型表面贴装型
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC
基本产品编号NCS20082
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